Datasheet4U.com - K6X4016T3F

K6X4016T3F Datasheet, Samsung semiconductor

K6X4016T3F Datasheet, Samsung semiconductor

Page 1 of K6X4016T3F Page 2 of K6X4016T3F Page 3 of K6X4016T3F

K6X4016T3F ram equivalent

  • 256kx16 bit low power and low voltage cmos static ram.
  • Preview is limited to up to three pages.

K6X4016T3F Features and benefits

K6X4016T3F Features and benefits


* Process Technology: Full CMOS
* Organization: 256K x16
* Power Supply Voltage: 2.7~3.6V
* Low Data Retention Voltage: 2V(Min)
* Three State Outputs .

K6X4016T3F Description

K6X4016T3F Description

The K6X4016T3F families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data re.

Image gallery

Page 1 of K6X4016T3F Page 2 of K6X4016T3F Page 3 of K6X4016T3F

TAGS

K6X4016T3F
256Kx16
bit
Low
Power
and
Low
Voltage
CMOS
Static
RAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

Related datasheet

K6X4016C3F

K6X4008C1F

K6X4008T1F

K6X0808C1D

K6X0808T1D

K6X1008C2D

K6X1008T2D

K6X8008C2B

K6X8008T2B

K6X8016C3B

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts